The ever increasing demand for high power, high frequency, and high temperature devices has prompted much research into AlGaN/GaN High Electron Mobility Transistors (HEMTs) because of their high breakdown voltage and excellent electron transit properties. Optimized AlGaN/GaN HEMTs promise to play a pivotal role in next generation mobile phone base stations, radar, mixers, oscillators, and attenuators in both commercial and military applications. This work characterizes the performance of AlGaN/GaN HEMTs on SiC in relation to source-gate spacing. Development of HEMT technology is explored utilizing T-gates and optimized ohmic contacts for improving the high frequency operation of future HEMT generations. This research was conducted at the Forshungszentrum Julich by Mr. Wiliam Roman as part of the IREE program. This activity was part of the educational activities of the NationalNanotechnology InfrastructureNetwork, conducted to provide superior participants in the NNIN REU program with a second summer international research experience. Through this activity, NNIN seeks demonstrate to thses students that nanotechnology research is an international enterprise and that approaching their research careers with an international perspective is both beneficial and critical to their success.

Lynn Rathbun received the BS in Physics from The Ohio State University in 1971, and an MS and PhD in Physics from the University of Illinois in 1973 and 1979 respectively. In 1979 he joined the newly established National Research and Resource Facility for Submicron Structures at Cornell University. Through the years, NRRFSS facility has evolved to the current Cornell Nanoscale Science and Technology Facility (CNF), and the user facility concept embodied in NRRFSS has eveolved to the 14 site National Nanotechnology Infratructure Network. Dr. Rathbun is currently both the Laboratory Manager for the Cornell Nanoscale Facility, and the Program Manager for the National Nanotechnology Infrastructure Network. As NNIN Program Manager he is responsible for directing a variety of network wide research and education programs, including this international undergraduate research program, at the 14 NNIN sites.

Sandip Tiwari is the Charles N. Mellowes Professor of Electrical Engineering at Cornell University. He received the Ph.D. in Electrical Engoneering from Cornell University in 1980. Prior to returning to Cornell he was at IBM Research from 1982 to1999. He served as Director of the Cornell Nanoscale Science and Technology Facility from 1999 to 2005. He is the Director of the National Nanotechnology Infrastructure Network, a position he as held since 1999.

Researchers should cite this work as follows:

• (2009), "Development of AlGaN/GaN HEMT Technology For Highest Frequency Operation: An Undergraduate Research Experience at the Forshungszentrum Jülich (Germany) ," http://globalhub.org/resources/1892.

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1. iree2008
2. trip report