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Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes

ABSTRACT: The process of the design and manufacture of hi-tech products currently involves a global effort and multinational teams. In this environment, US engineering students should be proficient in the technical subjects, technological trends and …

Abstract

ABSTRACT: The process of the design and manufacture of hi-tech products currently involves a global effort and multinational teams. In this environment, US engineering students should be proficient in the technical subjects, technological trends and business practices that are exist in different countries and cultures.

In this research project, which is focused on fabrication and studies of novel nanostructures based on highly organized arrays of size and shape controlled silicon nanocrystals in the form of pyramid-dot complexes and strained Si nanolayers, the PI uses the existing ties to the University of Tokyo and provides a meaningful international experience for NJIT undergraduate students. Series of samples are prepared by NJIT students using our Japanese collaborator unique nano-fabrication facilities. The same group of students are performing in-depth studies of the sample properties and fabricating memory device prototypes in Newark, NJ. Our industrial collaborators are in the process of evaluation of these novel memory device prototypes.

Bio Leonid Tsybeskov obtained his Ph.D. in applied physics from Odessa Mechnikov University, USSR in 1986. From 1986 to 1993 he was a Staff Scientist at the Laboratory for Non-crystalline Semiconductors at Odessa Mechnikov University. From 1993 to 2001 he was a Post-doctoral Research Fellow and Visiting Research Professor at the University of Rochester in Rochester, NY. In 1999 he received German Academic Exchange Service (DAAD) Fellowship and was a Visiting Researcher at Technical University of Munich in Munich, Germany. In 2001 he accepted a faculty position at New Jersey Institute of Technology (NJIT) in Newark, NJ. At NJIT Tsybeskov's research has centered on Group IV semiconductor nanostructures. He has made seminal contributions to the development of novel fabrication techniques and understanding of the properties of silicon and silicon/germanium nanostructures and is internationally recognised for his expertise in Group IV nanostructure photonics. Professor Tsybeskov has published more than 120 scientific articles in journals and books and has 2 U.S. patents. He is a Fellow of the American Physical Society.

Darren Coppola received the BSE in Electrical Engineering from New Jersey Institute of Technology in 2008. He currently helds an enginnering position at BAE Systems in Wayne, NJ and works on his MSE degree at NJIT.

Cite this work

Researchers should cite this work as follows:

Leonid Tsybeskov, "Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes", Trip report presented at the NSF IREE 2008 Grantees Conference, May 2008, Washington, D.C.
  • (2009), "Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes ," http://globalhub.org/resources/1952.

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Tags
  1. iree2008
  2. trip report

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