A novel microwave technique for rapid thermal processing of silicon carbide wide bandgap semiconductor
The NSF SBIR Phase II grant was awarded to Dr. Yonglai Tian of LT Technologies. The main project task to be completed under the NSF award was the development of a protective cap that can prevent the decomposition of MgO doped GaN thin films during microwave annealing. In order to effectively complete all aspects of the research project and overcome the challenges of the project, an international collaboration was established between LT Technologies and the Dalian University of Technology (DUT), in Dalian, China. Because the DUT specializes in the fields of science and engineering, possesses state of the art semiconductor clean rooms, laboratories, and equipment, and has made great progresses in semiconductor fabrication techniques, the DUT was the best institute for international cooperation under the IREE. Elissa Williams, a graduate student at George Mason University, Andy Len, an undergraduate student at the University of Maryland, and Dr. Yonglai Tian, PI of the NSF SBIR project and chief scientist at LT Technologies, traveled to China and performed research at the DUT during May through November of 2008. Under the NSF grant and as a result of the international research collaboration, an AlN cap, which protects MgO doped GaN films from decomposition during microwave annealing, was fabricated and characterized and the optimum annealing conditions for AlN capped MgO doped GaN thin films were determined. A phosphoric acid etch, which selectively removes the AlN cap from MgO doped GaN thin films, was also developed during the international research experience. The international research cooperation promoted cultural diversity, fostered future interactions between LT Technologies and the DUT, and helped to enhance the perspective of China for the two American research students.
Andy Len is an undergraduate student in the Department of Materials Science and Engineering at the University of Maryland. Andy is expected to graduate from the University of Maryland with a B.S. in Materials Science and Engineering in 2011. From 2006 to 2007, Andy interned in the Biochemical and Nuclear Engineering Laboratory at the University of Maryland. In 2007, Andy conducted research in the Materials Department at the National Institute of Standards and Technology. Andy's research interests include semiconductor materials and devices.
Dr. Yonglai Tian received a B.S. degree in Materials Science and Engineering from Tsinghua University in 1968. He received a Ph.D. in Materials Science and Engineering from Lehigh University in 1986. From 1986 to 1988, Dr. Tian was a postdoctoral research associate in Materials Science and Engineering at Northwestern University. Dr. Tian has published more than forty technical papers and currently holds 4 patents. Dr. Yonglai Tian is the founder and chief scientist of LT Technologies, a company which specializes in the development of microwave devices for semiconductor fabrication. Dr. Tian's research interests include the microwave processing of materials and semiconductors.
Researchers should cite this work as follows:ELISSA WILLIAMS and YONGLAI TIAN, "A novel microwave technique for rapid thermal processing of silicon carbide wide bandgap semiconductor", Trip report presented at the NSF IREE 2008 Grantees Conference, May 2008, Washington, D.C.
(2009), "A novel microwave technique for rapid thermal processing of silicon carbide wide bandgap semiconductor ," http://globalhub.org/resources/1972.